It's RF, made in India
Built to perform

SiGaN designs indigenous GaN power amplifiers and RF front-end chips for radar, satcom and 5G. Deep engineering, homegrown IP, and a team that has taped out silicon before.

50W

Ku-Band GaN Amplifier

RF Bands

48Yrs

Combined founder expertise

The lineup

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Our flagship

GaN High Power Amplifier Family

Our GaN power amplifiers cover everything from S-Band to Ku-Band, with output power up to 50W. Designed in India for radar, satcom and high power communication links where reliability is not optional.

50W KU-Band

S TO KU COVERAGE

GaN Powered

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GaN high power amplifier module with SMA connectors

For illustration only — actual product may differ

Front End T/R MMIC Module Family

Ten transmit and receive front-end chips spanning S, C, X and Ku bands. These are the core building blocks for AESA radar and phased-array systems, designed to bring beamforming capability home.

S-Band

C-Band

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T/R MMIC front-end module for AESA radar with SMA connectors

For illustration only — actual product may differ

About

SiGaN started in Hyderabad in 2024 with a simple goal, to build the RF and microwave chips that India has always had to import. Today our team designs GaN power amplifiers and front-end ICs for radar, defense, satcom and 5G, drawing on 48 years of combined experience across RFIC design, MMIC design and radar systems. We own the IP, we own the architecture, and we are building a homegrown semiconductor capability our customers can rely on.

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Need help now? Call +91 99595 46154