The RF front-end, done right.
Every radar, satcom link and 5G network lives or dies at the RF front-end. SiGaN designs the GaN power amplifiers and MMICs that own that boundary — built by engineers who lose sleep over the last dB.
Started over a bench, not a slide deck.
SiGaN began in Hyderabad in 2024, when a team of RF engineers — tired of watching India import the chips its radar and satcom programs depend on — decided to tape out their own.
We run the company the way we run a tapeout: small teams, full-custom design, and a refusal to ship a datasheet number we couldn't measure ourselves. Every GaN power amplifier and front-end T/R MMIC we make — spanning S, C, X and Ku bands — is architected, designed and characterized under one roof in Hyderabad, then built with the foundry partners we trust most. We own the IP and the architecture, end to end.
We're a startup, but the silicon isn't an experiment. It's built for radar, satcom, defense and 5G programs that can't afford to be wrong — backed by 48 years of combined experience across RFIC design, MMIC design and radar systems.
Three things we won't compromise on.
Full-custom, every time
No re-labeled reference designs. Each part is laid out transistor by transistor for the spec it has to hit — and nothing it doesn't.
Numbers we can measure
If it's on the datasheet, we've put it on a bench and confirmed it across temperature. We'd rather under-promise than ship a typ-only number.
Designed and supported in-house
The engineer who drew the part is the one who answers your application question. No tier-one queue, no offshore handoff.